应用于空间粒子探测的Si-PIN传感器电子辐照测试

孙莹; 王风; 张珅毅; 荆涛; 杨垂柏; 沈国红; 张焕新; 闫雪梅

doi:10.11728/cjss2016.06.932

应用于空间粒子探测的Si-PIN传感器电子辐照测试

doi: 10.11728/cjss2016.06.932

1. 中国科学院国家空间科学中心天基空间环境探测北京市重点实验室北京 100190;
2.中国人民解放军61741部队北京 100094

详细信息

通讯作者:
孙莹,E-mail:sunying@nssc.ac.cn

中图分类号: V476.4
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出版历程
- 收稿日期: 2015-10-30
- 修回日期: 2016-03-18
- 刊出日期: 2016-11-15

Research on Electron Irradiation Test of Si-PIN Detectors for Space Particle Monitor

1. Beijing Key Laboratory of Space Environment Exploration, National Space Science Center, Chinese Academy of Sciences, Beijing 100190;
2. Unit 61741 of PLA, Beijing 100094

摘要

摘要: 长期的高能电子辐照会对Si-PIN传感器探测性能造成影响，为了考核应用器件耐电子辐照能力，采用电子辐照源模拟空间电子环境对半导体传感器进行辐照试验.试验结果表明：传感器在接收7.64×10¹⁴辐照剂量情况下，传感器能量响应能力未发生改变，计数效率稍有下降；随着辐照剂量的增大，虽然传感器漏电流不断增大，但是噪声水平较平稳，传感器的性能不影响载荷工作指标.
- 高能电子 /
- 半导体传感器 /
- 辐照 /
- 噪声
Abstract: Long term high energy electron irradiation may affect the performance of the Si-PIN Semiconductor Detector (SSD). In order to check the electronic radiation ability of the device, electron irradiation source was used to simulate space electron environment, and the irradiation experiments were carried out on the semiconductor detector. Experiment results show that under the radiation dose of 7.64×10¹⁴, the SSD's energy response capability had not changed, and the counting efficiency slightly decreased. As the radiation dose increased, the leakage current of the SSD increased, but the noise was relatively stable, and the performance of the detector did not affect the work index of the load.
- High energy electron /
- Semiconductor detector /
- Irradiation /
- Noise

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参考文献(7)

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