Research on Electron Irradiation Test of Si-PIN Detectors for Space Particle Monitor
-
摘要: 长期的高能电子辐照会对Si-PIN传感器探测性能造成影响,为了考核应用器件耐电子辐照能力,采用电子辐照源模拟空间电子环境对半导体传感器进行辐照试验.试验结果表明:传感器在接收7.64×1014辐照剂量情况下,传感器能量响应能力未发生改变,计数效率稍有下降;随着辐照剂量的增大,虽然传感器漏电流不断增大,但是噪声水平较平稳,传感器的性能不影响载荷工作指标.Abstract: Long term high energy electron irradiation may affect the performance of the Si-PIN Semiconductor Detector (SSD). In order to check the electronic radiation ability of the device, electron irradiation source was used to simulate space electron environment, and the irradiation experiments were carried out on the semiconductor detector. Experiment results show that under the radiation dose of 7.64×1014, the SSD's energy response capability had not changed, and the counting efficiency slightly decreased. As the radiation dose increased, the leakage current of the SSD increased, but the noise was relatively stable, and the performance of the detector did not affect the work index of the load.
-
Key words:
- High energy electron /
- Semiconductor detector /
- Irradiation /
- Noise
-
[1] WANG Zhusheng, LI Zhankui, GAO Ping, et al. Development of a semiconductor telescope detection system and its application in satellite[J]. Nucl. Phys. Rev., 2011, 28(2):200-203(王柱生, 李占奎, 高萍, 等. 半导体望远镜探测系统研制及其在卫星上的应用[J]. 原子核物理评论, 2011, 28(2):200-203) [2] ZHANG Binquan, WEI Fei, LENG Shuang, WANG Shijin. Effect of electron irradiation on the performance of silicon drift detector[J]. J. Beijing Univ. Aeron. Astron., 2013, 39(2):235-238(张斌全, 韦飞, 冷双, 王世金. 电子照射对硅漂移探测器性能的影响[J]. 北京航空航天大学学报, 2013, 39(2):235-238) [3] DING Honglin. Nuclear Radiation Detector Technology[M]. Harbin: Harbin Press, 2010(丁洪林. 核辐射探测器技术[M]. 哈尔滨: 哈尔滨出版社, 2010) [4] MENG Xiangcheng. Development and application of a new type of semiconductor detector[J]. Nucl. Electr. Detect. Tech., 2004, 24(1):87-96(孟祥承. 新型半导体探测器发展和应用[J]. 核电子学与探测技术, 2004, 24(1):87-96) [5] OUYANG Xiaoping. High sensitive and large area silicon PIN detector array[J]. Nucl. Electr. Detect. Tech., 2000, 20(5):329-331(欧阳晓平. 高灵敏大面积硅PIN探测器阵列[J].核电子学与探测技术, 2000, 20(5):329-331) [6] KIM H, PARK S, HA J, CHO S, PARK K. Design and fabrication of a Si PIN-type radiation detector for alpha spectroscopy[J]. J. Korean Phys. Soc., 2009, 53(2):454-458 [7] PARK K S, PARK J M, YOON Y S, KOO J G. Effects of the resistivity and crystal orientation of the silicon PIN detector on the dark current and radiation response characteristics[C]//IEEE Nuclear Science Symposium Conference Record. 2006:1068-1072 -

计量
- 文章访问数: 961
- HTML全文浏览量: 16
- PDF下载量: 795
- 被引次数: 0