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• 日球层物理和太阳系探测 • Previous Articles     Next Articles

Assessing single-event-upsets in SRAM based on TCAD and Geant 4

Chen Shanqiang1,2, Shi Liqin1   

  1. (1.Center for Space Science and Applied Research, Chinese Academy of Sciences, Beijing 100190; 2.Graduate University of Chinese Academy of Sciences, Beijing 100049)
  • Received:1900-01-01 Revised:1900-01-01 Online:2011-07-15 Published:2011-07-15
  • Contact: Chen Shanqiang

Abstract: A new method based on Geant4 and Technology Computer Aided Design (TCAD) is described to assess Single Event Upsets (SEU) sensitivity of SRAMs (Static RAM) in the design phase. SRAM's response to radiation and Heavy ion induced upsets was obtained by TCAD simulation instead of ground simulation experiments. Heavy-ion simulation data are fitted by Weibull Function. Then, the energy deposition of secondary particles produced by proton-silicon nuclear reaction was calculated using Geant4 which is based on Monte Carlo method. Finally, the proton-induced upsets can be achieved by combining with Weibull Function. Using this method, the heavy ion and proton-induced SEU rates in TSMC 0.18 μm SRAM were calculated, and the results are basically consistent with ground simulation experiments.

Key words: Anisotropic plasma, MHD shock wave, Dimensionless method, SH, UVS, Smear