28 nm体硅工艺FPGA BRAM脉冲激光试验及翻转特性
doi: 10.11728/cjss2024.06.2024-0007 cstr: 32142.14.cjss.2024-0007
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薛国凤 女, 1984年6月出生于陕西省西安市, 现为中国科学院国家空间科学中心高级工程师, 主要研究方向为空间综合电子技术. E-mail: xueguofeng@nssc.ac.cn -
周昌义 男, 1965年8月出生于湖北省汉川市, 现为中国科学院国家空间科学中心研究员, 博士生导师, 主要研究方向为空间综合电子技术. E-mail: zhoucy@nssc.ac.cn
作者简介:
通讯作者:
SEE Upset Characteristics of BRAM in 28 nm Bulk FPGA by Pulsed Laser Test
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摘要: 针对SRAM型FPGA内部BRAM在轨出现翻转错误以及如何有效进行容错设计的问题, 提出了测试BRAM空间单粒子效应和多位翻转图样的方法. 多位翻转图样可以表征单次单粒子事件导致的BRAM中相邻单元的翻转特征, 进而用于分析逻辑字内是否存在多位翻转. 以XC7K410T-FFG900为研究对象, 分析其内部资源的组织结构, 采用脉冲激光试验测试BRAM的翻转特性. 通过试验测得FPGA内BRAM的翻转阈值以及在不同激光能量下的翻转截面, 并分析得到BRAM在不同能量照射下的多位翻转图样. 试验结果表明, BRAM中单个单元翻转所占比例随激光能量的增加而降低, 而多单元翻转所占比例随激光能量的增加呈上升趋势. BRAM在不同脉冲激光能量下可产生2 bit到11 bit的多单元翻转, 但通过错误注入试验验证, 该多单元翻转在单个字或者字节内并无多位翻转问题. 研究结果为提高SRAM型FPGA在航天应用中的可靠性提供了试验支持, 并依据BRAM的翻转特性给出了SRAM型FPGA在轨加固方法和建议.
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关键词:
- 单粒子效应 /
- 脉冲激光 /
- 多单元翻转(MCU) /
- BRAM翻转图样 /
- 单粒子翻转容错
Abstract: In order to get a well-targeted Single Event Upset (SEU) mitigation for block RAM in SRAM based FPGA, a method is proposed for researching the Single Event Effect (SEE) characteristics of FPGA and get the Multiple-Cell Upset (MCU) pattern which reveal the upset mode of adjacent cells in BRAM. Pulsed laser tests were performed on 28 nm bulk Kintex-7 XC7K410T-FFG900 FPGA after analyzing the structure of configurable frame in Kintex-7 serial FPGA. The Single-Cell Upset and Multiple-Cell Upset induced by pulsed laser were observed during the test, and the cross section under different laser energy was tested. Besides, the Multiple-Cell Upset patterns of BRAM in FPGA were analyzed. The result shows that the proportion of Multi-Cell Upset climbs up with the increasing laser energy, while the proportion of Single-Cell Upset goes in the opposite way. Two to eleven bits Multiple-Cell Upset may be induced by one pulsed laser without Multiple-Bit Upset in any logical word or byte according to the error injecting test result. Some SEE mitigation methods were suggested according to the results of SEE tests to improve the reliability of SRAM based FPGA in space application.-
Key words:
- Single event effect /
- Pulsed laser /
- Multiple-Cell Upset (MCU) /
- BRAM upset pattern /
- SEU fault-tolerant
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图 13 不同能量下BRAM中的最大MCU翻转图样
Figure 13. Maximum MCU upset pattern in BRAM under different energy
图 14 带ECC及系统维护功能的BRAM模块
Figure 14. Diagram of BRAM control logic with ECC and system maintenance
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