EFFECTS OF TRACK STRUCTURE OF HIGH-ENERGY HEAVY IONS ON SINGLE EVENT UPSET

The track structure of high-energy heavy ions was calculated in this paper and using Monte Carlo method, effects of the track structure on single event upset was studied. Taking into account the track structure, devices with small sensitive cell and low upset threshold show lower upset cross sections and upset rates, when compared with LET calculation. When ion becomes heavier, this decrease is remarkable even for devices with moderate dimension sensitive cell and higher upset threshold. In general, ion track shows effect when effective deposited energy is comparable with upset threshold. High-energy heavy ions can penetrate into thick material, in addition large dimensional track has chance to deposit enough energy in neighboring cells simultaneously. Both of these two cases can give rise to multiple-bit upsets. And this multiple-bit upsets effect can't be calculated with LET.