Volume 35 Issue 6
Nov.  2015
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LIU Chao, GUAN Yibin, ZHANG Aibing, SUN Yueqiang, LIANG Jinbao, ZHENG Xiangzhi, DING Jianjing, KONG Linggao, TIAN Zheng, WANG Wenjing. Study on Technology of Using Semiconductor Diode Volt-Ampere Characteristic to Test Langmuir Probe Performance[J]. Journal of Space Science, 2015, 35(6): 763-768. doi: 10.11728/cjss2015.06.763
Citation: LIU Chao, GUAN Yibin, ZHANG Aibing, SUN Yueqiang, LIANG Jinbao, ZHENG Xiangzhi, DING Jianjing, KONG Linggao, TIAN Zheng, WANG Wenjing. Study on Technology of Using Semiconductor Diode Volt-Ampere Characteristic to Test Langmuir Probe Performance[J]. Journal of Space Science, 2015, 35(6): 763-768. doi: 10.11728/cjss2015.06.763

Study on Technology of Using Semiconductor Diode Volt-Ampere Characteristic to Test Langmuir Probe Performance

doi: 10.11728/cjss2015.06.763
  • Received Date: 2014-12-31
  • Rev Recd Date: 2015-07-20
  • Publish Date: 2015-11-15
  • A technique of using a semiconductor diode volt-ampere characteristic to test Langmuir probe performance is presented. The Langmuir probe is an important technique for in-suit detecting the space plasma, and its performance test is the key to ensure that its technical indicators can meet the mission requirements. The technique of using a semiconductor diode volt-ampere characteristic demands less of external factors, so it can be carried out in a laboratory environment. The test results can be used as preliminary performance verification before calibration test of ground plasma environment, and it is proved that the method is effective and feasible in a lab environment test.

     

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