Volume 44 Issue 6
Dec.  2024
Turn off MathJax
Article Contents
XUE Guofeng, ZHOU Changyi, AN Junshe, WU Hao, WANG Tianwen. SEE Upset Characteristics of BRAM in 28 nm Bulk FPGA by Pulsed Laser Test (in Chinese). Chinese Journal of Space Science, 2024, 44(6): 1147-1154 doi: 10.11728/cjss2024.06.2024-0007
Citation: XUE Guofeng, ZHOU Changyi, AN Junshe, WU Hao, WANG Tianwen. SEE Upset Characteristics of BRAM in 28 nm Bulk FPGA by Pulsed Laser Test (in Chinese). Chinese Journal of Space Science, 2024, 44(6): 1147-1154 doi: 10.11728/cjss2024.06.2024-0007

SEE Upset Characteristics of BRAM in 28 nm Bulk FPGA by Pulsed Laser Test

doi: 10.11728/cjss2024.06.2024-0007 cstr: 32142.14.cjss.2024-0007
  • Received Date: 2024-01-09
  • Rev Recd Date: 2024-03-01
  • Available Online: 2024-03-16
  • In order to get a well-targeted Single Event Upset (SEU) mitigation for block RAM in SRAM based FPGA, a method is proposed for researching the Single Event Effect (SEE) characteristics of FPGA and get the Multiple-Cell Upset (MCU) pattern which reveal the upset mode of adjacent cells in BRAM. Pulsed laser tests were performed on 28 nm bulk Kintex-7 XC7K410T-FFG900 FPGA after analyzing the structure of configurable frame in Kintex-7 serial FPGA. The Single-Cell Upset and Multiple-Cell Upset induced by pulsed laser were observed during the test, and the cross section under different laser energy was tested. Besides, the Multiple-Cell Upset patterns of BRAM in FPGA were analyzed. The result shows that the proportion of Multi-Cell Upset climbs up with the increasing laser energy, while the proportion of Single-Cell Upset goes in the opposite way. Two to eleven bits Multiple-Cell Upset may be induced by one pulsed laser without Multiple-Bit Upset in any logical word or byte according to the error injecting test result. Some SEE mitigation methods were suggested according to the results of SEE tests to improve the reliability of SRAM based FPGA in space application.

     

  • loading
  • [1]
    孙鹏跃, 刘旭辉, 毛二坤, 等. 利用分时刷新和位置约束的卫星载荷BRAM抗辐照设计方法[J]. 国防科技大学学报, 2023, 45(5): 231-236 doi: 10.11887/j.cn.202305027

    SUN Pengyue, LIU Xuhui, MAO Erkun, et al. BRAM anti-irradiation design method for satellite payloads using time-sharing refreshing and location constraint[J]. Journal of National University of Defense Technology, 2023, 45(5): 231-236 doi: 10.11887/j.cn.202305027
    [2]
    TRIPPE J M, REED R A, AUSTIN R A, et al. Electron-induced single event upsets in 28 nm and 45 nm bulk SRAMs[J]. IEEE Transactions on Nuclear Science, 2015, 62(6): 2709-2716 doi: 10.1109/TNS.2015.2496967
    [3]
    赵元富, 王亮, 岳素格, 等. 纳米级CMOS集成电路的单粒子效应及其加固技术[J]. 电子学报, 2018, 46(10): 2511-2518 doi: 10.3969/j.issn.0372-2112.2018.10.027

    ZHAO Yuanfu, WANG Liang, YUE Suge, et al. Single event effect and its hardening technique in nano-scale CMOS integrated circuits[J]. Acta Electronica Sinica, 2018, 46(10): 2511-2518 doi: 10.3969/j.issn.0372-2112.2018.10.027
    [4]
    WANG Z B, CHEN W, YAO Z B, et al. Proton-induced single-event effects on 28 nm Kintex-7 FPGA[J]. Microelectronics Reliability, 2020, 107: 113594 doi: 10.1016/j.microrel.2020.113594
    [5]
    TONFAT J, KASTENSMIDT F L, ARTOLA L, et al. Analyzing the influence of the angles of incidence on SEU and MBU events induced by low LET heavy ions in a 28-nm SRAM-based FPGA[C]//Proceedings of the 2016 16th European Conference on Radiation and Its Effects on Components and Systems. Bremen: IEEE, 2016: 1-6. DOI: 10.1109/RADECS.2016.8093186
    [6]
    WIRTHLIN M, LEE D, SWIFT G, et al. A method and case study on identifying physically adjacent multiple-cell upsets using 28-nm, interleaved and SECDED-protected arrays[J]. IEEE Transactions on Nuclear Science, 2014, 61(6): 3080-3087 doi: 10.1109/TNS.2014.2366913
    [7]
    PÉREZ-CELIS A, WIRTHLIN M J. Statistical method to extract radiation-induced multiple-cell upsets in SRAM-based FPGAs[J]. IEEE Transactions on Nuclear Science, 2020, 67(1): 50-56 doi: 10.1109/TNS.2019.2955006
    [8]
    LEE D S, WIRTHLIN M, SWIFT G, et al. Single-event characterization of the 28 nm Xilinx kintex-7 field-programmable gate array under heavy ion irradiation[C]//Proceedings of 2014 IEEE Radiation Effects Data Workshop. Paris: IEEE, 2014: 1-5. DOI: 10.1109/REDW.2014.7004595
    [9]
    封国强, 姜昱光, 朱翔, 等. 脉冲激光和重离子辐照FPGA产生的多位翻转效应的比较[J]. 原子能科学技术, 2014, 48(S1): 732-736

    FENG Guoqiang, JIANG Yuguang, ZHU Xiang, et al. Comparison of multi-bit upset in FPGA induced by pulsed laser and heavy ions[J]. Atomic Energy Science and Technology, 2014, 48(S1): 732-736
    [10]
    XILINX. UG474(v1.8), 7 Series FPGAs Configurable Logic Block[EB/OL]. 15-16. [2016-09-27]. https://docs.xilinx.com/v/u/en-US/ug474_7Series_CLB
    [11]
    XILINX. UG470(v1.17), 7 Series FPGAs Configuration[EB/OL]. 100-100. [2023-12-05]. https://docs.xilinx.com/v/u/en-US/ug470_7Series_Config
    [12]
    上官士鹏, 朱翔, 陈睿, 等. Flash芯片电流“尖峰”现象的脉冲激光试验[J]. 北京航空航天大学学报, 2021, 47(5): 961-966 doi: 10.13700/j.bh.1001-5965.2020.0082

    SHANGGUAN Shipeng, ZHU Xiang, CHEN Rui, et al. Experimental results of high current spike in Flash chip by pulsed laser[J]. Journal of Beijing University of Aeronautics and Astronautics, 2021, 47(5): 961-966 doi: 10.13700/j.bh.1001-5965.2020.0082
    [13]
    MA Y Q, HAN J W, SHANGGUAN S P, et al. SEE characteristics of COTS devices by 1064 nm pulsed laser backside testing[C]//Proceedings of 2018 IEEE Radiation Effects Data Workshop. Waikoloa: IEEE, 2018: 1-4. DOI: 10.1109/NSREC.2018.8584271
    [14]
    HUANG Jianguo, HAN Jianwei. Calculation of LET in SEE simulation by pulsed laser[J]. Science in China (Series G), 2005, 48 (1): 113-121
    [15]
    李赛, 陈睿, 韩建伟, 等. 脉冲激光诱发65nm体硅CMOS加固触发器链的单粒子翻转敏感度研究[J]. 航天器环境工程, 2021, 38(1): 55-62 doi: 10.12126/see.2021.01.009

    LI Sai, CHEN Rui, HAN Jianwei, et al. Sensibility of single event upset of hardened D flip-flop chain in 65 nm bulk si-licon CMOS irradiated by pulsed laser[J]. Spacecraft Environment Engineering, 2021, 38(1): 55-62 doi: 10.12126/see.2021.01.009
    [16]
    XILINX, UG473(v1.14), 7 Series FPGAs Memory Resources[EB/OL]. 33-33. [2019-07-03]. https://docs.xilinx.com/v/u/en-US/ug473_7Series_Memory_Resources
  • 加载中

Catalog

    通讯作者: 陈斌, bchen63@163.com
    • 1. 

      沈阳化工大学材料科学与工程学院 沈阳 110142

    1. 本站搜索
    2. 百度学术搜索
    3. 万方数据库搜索
    4. CNKI搜索

    Figures(15)

    Article Metrics

    Article Views(328) PDF Downloads(30) Cited by()
    Proportional views
    Related

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return